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Releases: tukl-msd/DRAMPower

v5.1

01 Aug 07:17
5ed2d6e
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What's Changed

  • Added interface calculations for DDR4
  • Added multiple device implementations for DDR5, LPDDR4, LPDDR5
  • Upgraded DRAMPower CLI tool
  • Introduced common SI units
  • Based MemSpecs on new internal DRAMUtils library ( https://github.com/tukl-msd/DRAMUtils )

DRAMPower v5.0-RC1

10 Nov 13:43
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DRAMPower v5.0-RC1 Pre-release
Pre-release
  • Complete rewrite of the DRAMPower Simulator
  • DRAMPower is now a library, which will be used in DRAMSys
  • Interface Power can now be calculated
  • Based on CMake build system
  • New standards: LPDDR4, LPDDR5, DDR4, DDR5
  • Generic and standard-specific tests (also in CI)

DRAMPower v4.1

10 Nov 13:33
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Small Changes...

New DRAMPower 5.0 will be released soon.

DRAMPower v4.0

10 Sep 16:41
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Major changes:

  • DRAMPower can now be compiled as a library. This enables a user
    to access the tool through an API and log commands and their
    corresponding time stamps, removing the need to store large
    command traces on disk. In addition, cycle counting variables
    have been changed to int64 to support longer simulations.
    The library can be compiled without Xerces to remove an optional
    dependency and reduce the size of the binary.
  • Improved robustness. The latest build is automatically checked
    out on a test server, compiled, and tested to verify that the
    output matches an expected reference. The code is also compiled
    with a large number of warning flags enabled and treats all
    warnings as errors.
  • Bug fix: Fixed bug in io/termination energy calculation.
  • Bug fix: Fixed bug in calculation of auto precharge cycle.

For detailed change information you may browse the commits section.

Version 3.1

03 Jun 17:53
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Version 3.1 was released on 14th November 2013

  • Added IO and Termination Power measures from Micron's DRAM Power
    Calculator, for all supported DRAM generations. In the case of
    Wide IO DRAMs, these measures are already included in the provided
    current specifications. This feature enables support for multi-rank
    DRAM DIMMs (DDR2/3/4) and stacking of multiple Wide IO DRAM dies
    (equivalent to ranks). To indicate use of multi-rank DRAMs or
    multiple Wide IO DRAM dies/layers, the 'nbrOfRanks' parameter in
    the memory specification XMLs can be employed. Note: The DRAM
    command scheduler does not support multi-rank/multi-die DRAMs yet.
    Only the power estimation component of DRAMPower has been updated
    to support them. The current measures for dual-rank DRAMs only
    reflect those for the active rank and not the idle rank. The
    default state of the idle rank is assumed to be the same as the
    current memory state, for background power estimation. Hence,
    rank information in the command trace is not required.
  • Added warning messages: New warning messages are provided, to
    identify if the memory or bank state is inconsistent in the
    user-defined traces. Towards this, a state check is performed on
    every memory command issued.
  • Improved run-time options: Users can now point directly to the
    memory specification XML, instead of just the memory ID. Also,
    users can optionally include IO and termination power estimates
    (for both single and dual rank DRAMs) using '-r' flag in the
    command line options.
  • Bug fixes: (1) Refresh handler in the DRAM Command Scheduler was
    kept ON in the Self-Refresh mode, when it can be turned OFF. This
    bug has now been fixed. (2) Precharge All (PREA) always considered
    precharging of all banks. It has now been modified to consider
    precharging of the open/active banks alone.